The most commonly used device geometry is bottom gate with top drain and source electrodes, because this geometry is similar to the thin-film silicon transistor (TFT) using thermally grown SiO 2 as gate dielectric. OFETs have been fabricated with various device geometries.
These devices have been developed to realize low-cost, large-area electronic products and biodegradable electronics. OFETs can be prepared either by vacuum evaporation of small molecules, by solution-casting of polymers or small molecules, or by mechanical transfer of a peeled single-crystalline organic layer onto a substrate. Scale bar: 25 mmĪn organic field-effect transistor ( OFET) is a field-effect transistor using an organic semiconductor in its channel. This study provides a promising approach for developing next-generation energy-efficient electronic devices and ultralow-power applications.Organic CMOS logic circuit. Furthermore, compared to previously reported threshold-switching devices, our device demonstrated hysteresis-free switching characteristics. We obtained repetitive operation with low SS (32.8 mV dec −1) at room temperature, along with low dielectric injection efficiency (10 −6), through a structural design with separation of the conducting region, which determines on-state carrier transport, and the steep-switching region where the transition from off- to on-state occurs via impact ionization. In this study, we presented an impact-ionization-based threshold switching field-effect transistor (I 2S-FET) fabricated with a serial connection of a MoS 2 FET and WSe 2 impact ionization-based threshold switch (I 2S). However, most of them cannot retain steep switching at room temperature, and device performance degradation issues caused by impact ionization-induced hot carriers have not been structurally addressed. Recently, two-dimensional material-based impact ionization transistors with various structures have been reported with the advantages of a low critical electric field and a unique quantum confinement effect. A steep switching device with a low subthreshold swing (SS) that overcomes the fundamental Boltzmann limit ( kT/ q) is required to efficiently process a continuously increasing amount of data.
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